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Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals : evidence of implant damage enhanced diffusivitiesCARROLL, M. S; KOUDELKA, R.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S164-S167Conference Paper

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Diffusion of hydrogen interstitials in Zr based AB₂ and mischmetal based AB₅ alloysMANI, N; RAVI, N; RAMAPRABHU, S et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 34, pp 5201-5206, issn 0953-8984, 6 p.Article

Modeling atomic hydrogen diffusion in GaAsKAGADEI, V; NEFYODTSEV, E.SPIE proceedings series. 2004, pp 677-682, isbn 0-8194-5324-2, 6 p.Conference Paper

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Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed PhotodiodesITSUNO, A. M; EMELIE, P. Y; PHILLIPS, J. D et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 945-950, issn 0361-5235, 6 p.Conference Paper

Nuclear magnetic resonance study of hydrogen mobility in LaY2Ni9Hx and CeY2Ni9HxSOLONININ, A. V; BUZLUKOV, A. L; SKRIPOV, A. V et al.Journal of solid state chemistry (Print). 2009, Vol 182, Num 3, pp 586-591, issn 0022-4596, 6 p.Article

First principle study of stress effects on indium diffusion in uniaxially and biaxially strained siliconKIM, Young-Kyu; CHO, Bum-Goo; PARK, Soon-Yeol et al.Journal of computational electronics (Print). 2008, Vol 7, Num 3, pp 411-414, issn 1569-8025, 4 p.Conference Paper

First principles study of As-vacancy interaction and the ring mechanism of diffusion in the presence of Ge in SiJINYU ZHANG; ASHIZAWA, Yoshio; OKA, Hideki et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 20, pp 4879-4886, issn 0953-8984, 8 p.Article

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Study of hydrogen diffusion in Nb-Ta alloys by Gorsky effect measurementMUGISHIMA, T; YAMADA, M; YOSHINARI, O et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 442, Num 1-2, pp 119-123, issn 0921-5093, 5 p.Conference Paper

The influence of oxide/nitride surface layers on diffusion in Si and SiGeZANGENBERG, N. R; CHEVALLIER, J; HANSEN, J. L et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 5, pp 1077-1082, issn 0947-8396, 6 p.Article

Quantitative assessment of hydrogen diffusion by activated hopping and quantum tunneling in ordered intermetallicsBHATIA, Bhawna; SHOLL, David S.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 22, issn 1098-0121, 224302.1-224302.8Article

Diffusion and trapping of Mu in the III-V nitridesLICHTI, R. L; CELEBI, Y. G; COTTRELL, S. P et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 40, pp S4721-S4738, issn 0953-8984Article

Molecular dynamics simulations of diffusion of carbon into ironNARULKAR, R; BUKKAPATNAM, S; RAFF, L. M et al.Philosophical magazine (2003. Print). 2008, Vol 88, Num 8, pp 1259-1275, issn 1478-6435, 17 p.Article

Hydrogen transport in doped and undoped polycrystalline silicon : Modelling the negative bias temperature instabilityNICKEL, N. H.Microelectronics and reliability. 2007, Vol 47, Num 6, pp 899-902, issn 0026-2714, 4 p.Article

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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in siliconMARTIN-BRAGADO, I; CASTRILLO, P; JARAIZ, M et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035202.1-035202.8, issn 1098-0121Article

Comparative models for diffusion of implanted beryllium in gallium arsenideKOUMETZ, S; PESANT, J.-C; DUBOIS, C et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 22, issn 0953-8984, L283-L288Article

Diffusion of ⁶⁵Zn in Mg and in Mg-xAl solid solutionsCERMAK, Jiri; STLOUKAL, Ivo.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2386-2392, issn 1862-6300, 7 p.Article